{"title":"极敏感器件的导电或耗散材料上的纳米瞬态电流和瞬态电阻","authors":"K. Suzuki, M. Sato","doi":"10.1109/EOSESD.2004.5272639","DOIUrl":null,"url":null,"abstract":"Conductive and dissipative implements are used to guard extremely sensitive devices against electrostatic discharge. We developed the methods of IV characteristic, nano transient current and transient resistance from basic theory and evaluated the implements. Consequently, almost all the carbon molecules mixed implements are characterized by linearity, resistance, surface potential and breakdown. Also, the suitable resistance of conductive implements can be derived from the excessive mobile charge criteria. At present, almost all the implements cannot guard devices against the charged device model event. However, the theory and methods will derive the suitable and realizable resistance for implement and device makers.","PeriodicalId":302866,"journal":{"name":"2004 Electrical Overstress/Electrostatic Discharge Symposium","volume":"270 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nano-transient current and transient resistance on the conductive or dissipative materials for extremely sensitive devices\",\"authors\":\"K. Suzuki, M. Sato\",\"doi\":\"10.1109/EOSESD.2004.5272639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conductive and dissipative implements are used to guard extremely sensitive devices against electrostatic discharge. We developed the methods of IV characteristic, nano transient current and transient resistance from basic theory and evaluated the implements. Consequently, almost all the carbon molecules mixed implements are characterized by linearity, resistance, surface potential and breakdown. Also, the suitable resistance of conductive implements can be derived from the excessive mobile charge criteria. At present, almost all the implements cannot guard devices against the charged device model event. However, the theory and methods will derive the suitable and realizable resistance for implement and device makers.\",\"PeriodicalId\":302866,\"journal\":{\"name\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"volume\":\"270 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2004.5272639\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Electrical Overstress/Electrostatic Discharge Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2004.5272639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nano-transient current and transient resistance on the conductive or dissipative materials for extremely sensitive devices
Conductive and dissipative implements are used to guard extremely sensitive devices against electrostatic discharge. We developed the methods of IV characteristic, nano transient current and transient resistance from basic theory and evaluated the implements. Consequently, almost all the carbon molecules mixed implements are characterized by linearity, resistance, surface potential and breakdown. Also, the suitable resistance of conductive implements can be derived from the excessive mobile charge criteria. At present, almost all the implements cannot guard devices against the charged device model event. However, the theory and methods will derive the suitable and realizable resistance for implement and device makers.