{"title":"平面全离子注入高功率InP misfet","authors":"L. Messick, R. Nguyen, D. Collins","doi":"10.1109/CORNEL.1987.721226","DOIUrl":null,"url":null,"abstract":"Planar fully ion-implanted InP power MISFETS using SiO/sub 2/ as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB ain 800/spl mu/m gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our I mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Planar Fully Ion-Implanted High Power InP MISFETs\",\"authors\":\"L. Messick, R. Nguyen, D. Collins\",\"doi\":\"10.1109/CORNEL.1987.721226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Planar fully ion-implanted InP power MISFETS using SiO/sub 2/ as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB ain 800/spl mu/m gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our I mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.\",\"PeriodicalId\":247498,\"journal\":{\"name\":\"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1987.721226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1987.721226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Planar fully ion-implanted InP power MISFETS using SiO/sub 2/ as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB ain 800/spl mu/m gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our I mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.
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