{"title":"常压cvd生长SiGe基极HBT具有最高的电流增益-早期电压积","authors":"T. Han, D. Cho, S.-M. Lee, B.R. Ryum","doi":"10.1109/TENCON.1995.496426","DOIUrl":null,"url":null,"abstract":"A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product\",\"authors\":\"T. Han, D. Cho, S.-M. Lee, B.R. Ryum\",\"doi\":\"10.1109/TENCON.1995.496426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product
A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
