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引用次数: 8
摘要
一个RF(射频)dc-dc转换器已经开发,以证明在63兆赫使用反激配置的可能性。该变换器由两个部分组成:可变脉宽发生器(PWG)和带变压器和检测器的场效应管开关。设计的主要内容是提高开关、变压器和检测器的效率。异质结构AlGaAs/GaAs FET (HFET)的低电容,RF变压器的低漏感,快速肖特基二极管,多层陶瓷芯片电容器和表面贴装芯片电阻器使其能够实现从20 MHz到63 MHz的高效率。“硬开关”1瓦变换器达到60%至70%的效率,同时在宽范围的输入和输出电压下工作。
An RF (radio frequency) dc-dc converter has been developed to demonstrate the possibility of using a flyback configuration at 63 MHz. The converter consists of two sections: a variable pulse width generator (PWG) and a FET switch with a transformer and a detector. The bulk of the design was concentrated on improving the efficiency of the switch, the transformer and the detector. Low capacitances of the heterostructure AlGaAs/GaAs FET (HFET), a low leakage inductance of the RF transformer, a fast Schottky diode, multilayer ceramic chip capacitors and surface mount chip resistors made it possible to achieve high efficiencies from 20 MHz to 63 MHz. The "hard switching" 1-Watt converter achieves 60 to 70 percent efficiency, while operating with a wide range of input and output voltages.