具有快速读写电路的新型压控MRAM (VCM)，用于超大最后一级缓存

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838494

H. Noguchi, K. Ikegami, K. Abe, S. Fujita, Y. Shiota, T. Nozaki, S. Yuasa, Yoshishige Suzuki

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引用次数: 25

摘要

针对非易失性超大末级缓存，提出了一种具有新型快速读写电路的压控MRAM (VCM)。此外，通过使用“连续读-写-验证”方案控制热稳定因子，大大降低了写入错误率。采用VCM单极写入的“无读干扰非破坏自引用读”也提高了读错误率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel voltage controlled MRAM (VCM) with fast read/write circuits for ultra large last level cache

This paper presents voltage controlled MRAM (VCM) with novel fast read/write circuits for nonvolatile ultra-large last level cache. Further, write error rate has dramatically been reduced by thermal stability factor control using “continuous read-write-verify” scheme. Read error rate has also improved with “read-disturb-free non-destructive-self-reference read” with unipolar write of VCM.

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2016 IEEE International Electron Devices Meeting (IEDM)

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