{"title":"低离子能量等离子体化学反应器(PCR)中多能级亚微米结构的选择性刻蚀","authors":"V.V. Ustalov, O. Fedorovich, S.K. Levitskaja","doi":"10.1109/CRMICO.2002.1137275","DOIUrl":null,"url":null,"abstract":"Presented here are the results of selective plasma-chemical and chemical etching of multilevel structures with submicron element sizes. Plasma-chemical etching was performed in a PCR, with closed electron drift, and the chemically active ion energy was controlled in the range from 15 up to 300 eV with a variable magnetic field. Argon, insulating gas, chladone-218, and their mixtures with oxygen, were used as working gases. This method was able to remove twenty technological layers with 0.15 /spl mu/m element size.","PeriodicalId":378024,"journal":{"name":"12th International Conference Microwave and Telecommunication Technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Selective etching of multilevel submicron structures in plasma-chemical reactor (PCR) with low ion energy\",\"authors\":\"V.V. Ustalov, O. Fedorovich, S.K. Levitskaja\",\"doi\":\"10.1109/CRMICO.2002.1137275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presented here are the results of selective plasma-chemical and chemical etching of multilevel structures with submicron element sizes. Plasma-chemical etching was performed in a PCR, with closed electron drift, and the chemically active ion energy was controlled in the range from 15 up to 300 eV with a variable magnetic field. Argon, insulating gas, chladone-218, and their mixtures with oxygen, were used as working gases. This method was able to remove twenty technological layers with 0.15 /spl mu/m element size.\",\"PeriodicalId\":378024,\"journal\":{\"name\":\"12th International Conference Microwave and Telecommunication Technology\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference Microwave and Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2002.1137275\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference Microwave and Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2002.1137275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Selective etching of multilevel submicron structures in plasma-chemical reactor (PCR) with low ion energy
Presented here are the results of selective plasma-chemical and chemical etching of multilevel structures with submicron element sizes. Plasma-chemical etching was performed in a PCR, with closed electron drift, and the chemically active ion energy was controlled in the range from 15 up to 300 eV with a variable magnetic field. Argon, insulating gas, chladone-218, and their mixtures with oxygen, were used as working gases. This method was able to remove twenty technological layers with 0.15 /spl mu/m element size.
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