{"title":"用于s类功率放大器的SiGe BiCMOS高压驱动器","authors":"Bonghyuk Park, Seunghyun Jang, Jaeho Jung","doi":"10.1109/RFIT.2012.6401607","DOIUrl":null,"url":null,"abstract":"A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A SiGe BiCMOS high voltage driver for Class-S power amplifier\",\"authors\":\"Bonghyuk Park, Seunghyun Jang, Jaeho Jung\",\"doi\":\"10.1109/RFIT.2012.6401607\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401607\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SiGe BiCMOS high voltage driver for Class-S power amplifier
A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.