控制ZnO NPs的结构和电子性能:密度功能紧密结合方法

M. Kurban, H. Kurban, Mehmet M. Dalkilic
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引用次数: 3

摘要

我们采用密度-功能紧密结合(DFTB)方法对未掺杂和氮(N)掺杂ZnO纳米粒子(NPs)的结构和电子特征进行了全面的研究。通过增加未掺杂ZnO NPs中N原子的比例,采用新的算法研究了Zn-Zn、N-N、O-O、N- o等两体相互作用的键数(N)、序参量(R)和径向分布函数(RDF)。结果表明:Zn-Zn相互作用的总n大于Zn-Zn、n- n、n- o和O-O;因此,这意味着Zn原子对N或O原子有更大的偏好。Zn和O原子的rdf随N原子含量的增加而增加。Zn、O和N原子的R表明,O和N原子倾向于位于中心,而Zn原子倾向于位于表面。态密度(DOS)表明,未掺杂和n掺杂的ZnO NPs表现出与测量数据一致的半导体样行为。HOMO-LUMO能隙从-4.717 eV减小到-0.853 eV。由于能隙的减小,n原子含量的增加有助于ZnO NPs的不稳定。
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Controlling structural and electronic properties of ZnO NPs: Density-functional tight-binding method
We carried out a thorough examination of the structural and electronic features of undoped and Nitrogen (N)-doped ZnO nanoparticles (NPs) by the density-functional tight-binding (DFTB) method. By increasing the percent of N atoms in undoped ZnO NPs, the number of bonds ( n ), order parameter ( R ) and radial distribution function (RDF) of two-body interactions such as Zn-Zn, N-N, O-O, N-O, etc. were investigated using novel algorithms. Our results show that the total n of Zn-Zn interactions is greater than that of Zn-Zn, N-N, N-O, and O-O; thus, it means that Zn atoms have a greater preference for N or O atoms. The RDFs of Zn and O atoms increase based on the increase in the content of N atoms. The R of Zn, O and N atoms demonstrate that O and N atoms tend to locate at the center, whereas Zn atoms tend to reside on the surface. T he density of state (DOS) indicates that the undoped and N-doped ZnO NPs demonstrate a semiconductor-like behavior that is coherent with measured data. The HOMO-LUMO energy gap decreases from -4.717 to -0.853 eV. n increase in the content of N atoms contributes to the destabilization of ZnO NPs due to a decrease in the energy gap.
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