{"title":"非电离辐射对近地轨道130nm CMOS SRAM的影响","authors":"Christopher I. Allen, J. Petrosky, P. L. Orlando","doi":"10.1109/NAECON.2014.7045835","DOIUrl":null,"url":null,"abstract":"This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10<sup>-3</sup> bit<sup>-1</sup>yr<sup>-1</sup>; at 2000 km altitude, the rate increases to 1.9×10<sup>1</sup> bit<sup>-1</sup>yr<sup>-1</sup>. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications\",\"authors\":\"Christopher I. Allen, J. Petrosky, P. L. Orlando\",\"doi\":\"10.1109/NAECON.2014.7045835\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10<sup>-3</sup> bit<sup>-1</sup>yr<sup>-1</sup>; at 2000 km altitude, the rate increases to 1.9×10<sup>1</sup> bit<sup>-1</sup>yr<sup>-1</sup>. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.\",\"PeriodicalId\":318539,\"journal\":{\"name\":\"NAECON 2014 - IEEE National Aerospace and Electronics Conference\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"NAECON 2014 - IEEE National Aerospace and Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON.2014.7045835\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2014.7045835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications
This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10-3 bit-1yr-1; at 2000 km altitude, the rate increases to 1.9×101 bit-1yr-1. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
