2000 International Symposium On Power Semiconductor Devices And IC's

ing is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For other copying, reprint or republication permission, write to: IEEE Copyrights Manager, IEEE Operations Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1 331. '' All rights reserved. Copyright 02000 by the Institute of Electrical and Electronics Engineers, Inc. IEEE Catalog Number 00CH37094 ISBN 0-7803-6269-1 0-7803-6270-5 (Casebound Edition) 0-7803-6271 -3 (Microfiche Edition) Library of Congress 00-001 59 ISPSO’1000, May 22-25, TouIouie, France Chair’s Message On behalf of the ISPSD Conference Committee, I would like to welcome you to the 12th International Symposium on Power Semiconductor Devices and IC’s (ISPSD’2000). ISPSD provides a yearly international forum for technical discussion in all areas of Power Semiconductor Devices, Power ICs and their applications. This conference has grown to become today the most important international conference in this field. Fundamentally international, i t has the very peculiarity to be held each year, not simply in a different place, but in a different “continent” with a rotation throughout the world from Japan, to North America and to Europe. Following last year very successful meeting in Toronto, Canada, the Symposium returns for the third time to Europe, After Davos, Switzerland, in 1994 and Weimar, Germany in 1997, Toulouse, France, will host the Symposium for the very famous year 3000. The plenary invited talks on Monday afternoon mirror the geographical rotation of the conference and feature the following presentations: From Japan: “Progress in Wide-Bandgap Semiconductor S i c for Power Devices”, by Hiroyuki Matsunami from Kyoto University. From Europe: “A Review of RESURF Technology”, by Adriaan W. Ludikhuize, Philips Research, Eindhoven, The Netherlands. From North America: “Beyond Y2K: Technology Convergence as a Driver of Future Low-Voltage Power Management Semiconductors”, by Richard K. Williams, Advanced Analogic Technologies, Inc., Sunnyvale CA. Interestingly, these invited talks also fairly represent the domains covered by ISPSD, i.e. materials, devices and applications. The number of submitted abstracts reached a total number of 1.59. From this number, 65 where from “pure” academic research groups, 68 from “pure” industrial research teams and 26 where co-signed between universities and industries, emphasising their mutual strong collaboration in the power device domain. The global character of ISPSD is reflected by submissions originating from 2.5 countries; 40.8% from Europe, 34.5% from America, 15.9% from Japan, 11.4% from Asia and 7.4% from the rest of the world. 39 papers were accepted for ora1 presentation with another 46 accepted as poster session papers. Student papers, oral or poster presentation, are eligible for a “Best Student Paper Award” which will be announced at the end of the conference. A plenary workshop is planned on Wednesday 24th: on “TCAD Tools for Power Devices and IC’s”, and will be organised by Pr. Wolfgang Fichtner. You are a11 invited to share your thoughts, worries and experience, about the adequacy of modem TCAD microelectronics frameworks for simulating power structures. It is with great pleasure that I thank the ISPSD’2000 Organising and Technical Program Committees and specially the Technical Prosram Committee Chair, Albert Senes, the secre tariat team, Ms. Dominique Daurat and Isabelle Lefebvre, Ms. Marie-Thkrese lppolito for th: local, and numerous, arrangements, the LAAS-CNRS publishing service (Christian Bert: Daniel Daurat, Arlette Evrard and Roger Zittel) for their outstanding efforts in planning arpreparing this Symposium. We are all looking forward to welcoming you in Toulouse. Dr. Georges Charitat, ISPSD’2000 General Ci