利用紫外扩展光谱椭偏法实时表征宽带隙薄膜生长:在立方氮化硼中的应用

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500) Pub Date : 2001-06-26 DOI:10.1109/WBL.2001.946549

J. Zapien, R. Collins, L. J. Pillone, H. Qi, R. Messier

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摘要

本文报道了紫外扩展多通道椭偏仪在脉冲直流溅射下在C - si上沉积cBN薄膜的生长和层状结构的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Real time characterization of wide band gap thin film growth using UV-extended spectroscopic ellipsometry: applications to cubic boron nitride

We report the application of the UV-extended multichannel ellipsometer in studies of the growth and layered structure of cBN films deposited on c-Si using pulsed dc sputtering of a B/sub 4/C target with rf substrate bias.

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3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)

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