{"title":"高压pm注入SiGe HBT的电热分析","authors":"Zhen Lu, Liang Zhou, Xiaofeng Hu","doi":"10.1109/NEMO49486.2020.9343573","DOIUrl":null,"url":null,"abstract":"In this paper, the failure of SiGe HBT is analyzed under high power microwave pulses. The transient simulation is conducted to obtain the temperature distributions and change of junction temperature with pulse injected. The calculated failure results are compared with measurement results which show close agreements.","PeriodicalId":305562,"journal":{"name":"2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electro-Thermal analysis of SiGe HBT under HPM Injection\",\"authors\":\"Zhen Lu, Liang Zhou, Xiaofeng Hu\",\"doi\":\"10.1109/NEMO49486.2020.9343573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the failure of SiGe HBT is analyzed under high power microwave pulses. The transient simulation is conducted to obtain the temperature distributions and change of junction temperature with pulse injected. The calculated failure results are compared with measurement results which show close agreements.\",\"PeriodicalId\":305562,\"journal\":{\"name\":\"2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMO49486.2020.9343573\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMO49486.2020.9343573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electro-Thermal analysis of SiGe HBT under HPM Injection
In this paper, the failure of SiGe HBT is analyzed under high power microwave pulses. The transient simulation is conducted to obtain the temperature distributions and change of junction temperature with pulse injected. The calculated failure results are compared with measurement results which show close agreements.
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