{"title":"一种新的简化、可靠的基于夹紧冷场效应管s参数的HEMT建模方法","authors":"W.N. Mwema, G. Kompa","doi":"10.1109/MWSYM.2000.862234","DOIUrl":null,"url":null,"abstract":"An automatic technique for determining starting values for the parasitic elements of a distributed 18 element FET directly from pinched cold FET S-parameters is described. Optimization results using this technique are presented and show that the starting vector is very close to the solution. The approach is discussed on the basis of synthesized and measured S-parameter data.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A new simplified and reliable HEMT modelling approach using pinched cold FET S-parameters\",\"authors\":\"W.N. Mwema, G. Kompa\",\"doi\":\"10.1109/MWSYM.2000.862234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An automatic technique for determining starting values for the parasitic elements of a distributed 18 element FET directly from pinched cold FET S-parameters is described. Optimization results using this technique are presented and show that the starting vector is very close to the solution. The approach is discussed on the basis of synthesized and measured S-parameter data.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.862234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.862234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new simplified and reliable HEMT modelling approach using pinched cold FET S-parameters
An automatic technique for determining starting values for the parasitic elements of a distributed 18 element FET directly from pinched cold FET S-parameters is described. Optimization results using this technique are presented and show that the starting vector is very close to the solution. The approach is discussed on the basis of synthesized and measured S-parameter data.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
