扩展范围(至300°C)内小尺寸SOI mosfet的温度特性

2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI:10.1109/THERMINIC.2016.7749060

K. Petrosyants, Sergey V. Lebedev, L. Sambursky, V. G. Stakhin, I. Kharitonov

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引用次数: 6

摘要

在这项工作中，在扩展温度范围(高达300°C)下，展示了小型180纳米SOI CMOS技术的电测量结果及其分析。并与0.5 μm工艺的高温电特性进行了比较。在BSIMSOI模型的基础上，建立了SOI mosfet的修正模型，并提取了模型参数，用于IC模块的SPICE仿真。给出了随后的SPICE模拟和数字电路模块特性仿真结果。证明了在扩展温度范围集成电路(ic)中使用小规模SOI CMOS技术(180纳米)的潜在可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Temperature characterization of small-scale SOI MOSFETs in the extended range (to 300°C)

In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics of 0.5 μm technology is drawn. Modified model for SOI MOSFETs, based on BSIMSOI model is developed and model parameters are extracted for SPICE simulation of IC blocks. Results of subsequent SPICE simulation of analog and digital circuit blocks characteristics are presented. The potential feasibility of using small-scale SOI CMOS technology (180-nm) for extended temperature range integrated circuits (ICs) is demonstrated.

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2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

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