51 GHz f/sub / T/ 0.1 μ m p沟道mosfet

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307532

K. F. Lee, R. Yan, D. Jeon, Y. Kim, D. Tennant, E. Westerwick, K. Early, G. Chin, M. Morris, R. Johnson, T. M. Liu, R. Kistler, A. Voshchenkov, R. Swartz, A. Ourmazd

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引用次数: 3

摘要

我们报告了0.1 μ m栅极长度pmosfet创纪录的51 GHz f/sub T/。观察到的最大跨导为330 mS/mm，阈下斜率为87 mV/ 10年。我们还使用硅化铂在0.1 μ m栅极长度下获得了4-5 ω /平方算子的栅极片电阻。为了减少由于相对较深的结而造成的重叠电容，采用了两步侧壁工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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0.1 mu m p-channel MOSFETs with 51 GHz f/sub T/

We report a record 51 GHz f/sub T/ for 0.1 mu m gate length pMOSFETs. Maximum transconductance observed was 330 mS/mm, subthreshold slope was 87 mV/decade. We have also obtained gate sheet resistance of 4-5 Omega / Square Operator at 0.1 mu m gate length using platinum silicide. To reduce the overlap capacitance due to a relatively deep junction, a two-step sidewall process was implemented.<>

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1992 International Technical Digest on Electron Devices Meeting

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