一个单片宽带10-50 GHz分布式HEMT混频器,包括有源低射频合成器

D. Hollmann, R. Heilig, G. Baumann
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引用次数: 13

摘要

开发了一种毫米波GaAs HEMT MMIC分布式混频器,其射频频率范围为10 ~ 50 GHz,中频频率为几MHz ~ 5 GHz。有源器件为AlGaAs-GaAs hemt,门长为0.2 /spl mu/m,门宽为2/spl × /25 /spl mu/m。在无中频放大的情况下,当本端功率小于5 dBm时,混频器的转换增益在频率范围内优于-3 dB。RF和LO信号通过具有2db增益的有源分布式组合器馈送,LO到RF端口隔离为20db。单个混频器的尺寸为1.5/spl倍/ 1mm /sup 2/,包括偏置网络的组合器的尺寸为2/spl倍/ 1mm /sup 2/。制作了包含LO和RF合成器的集成宽带混频器芯片,其尺寸为4/ sp1 × 1 mm/sup / 2。
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A monolithic broadband 10-50 GHz distributed HEMT mixer including active LO-RF combiner
A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.
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