{"title":"一个单片宽带10-50 GHz分布式HEMT混频器,包括有源低射频合成器","authors":"D. Hollmann, R. Heilig, G. Baumann","doi":"10.1109/GAAS.1994.636938","DOIUrl":null,"url":null,"abstract":"A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"88 22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A monolithic broadband 10-50 GHz distributed HEMT mixer including active LO-RF combiner\",\"authors\":\"D. Hollmann, R. Heilig, G. Baumann\",\"doi\":\"10.1109/GAAS.1994.636938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"88 22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A monolithic broadband 10-50 GHz distributed HEMT mixer including active LO-RF combiner
A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.