S. Böhme, C. Girardot, J. Garnier, J. Arias‐Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, M. Zelsmann
{"title":"高阶PS-PDMS嵌段共聚物工业兼容定向自组装路线","authors":"S. Böhme, C. Girardot, J. Garnier, J. Arias‐Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, M. Zelsmann","doi":"10.1117/12.2219312","DOIUrl":null,"url":null,"abstract":"In this work, we present completely industry adapted processes for high-chi PS-PDMS block copolymers. DSA was performed on trenches fabricated within standard photolithography stacks and pattern transfer was made by using etching processes similar to those used for gate etching in industry. We propose the alignment of two different PS-PDMS (45.5kg/mol, 16kg/mol) solely by thermal annealing. By adding plasticizer molecules in the high molecular weight BCP (45.5k), we have not only avoided solvent vapor annealing but also reduced significantly the processing time. The properties of the guiding lines and the quality of the final BCP hard mask (CD uniformity, LWR, LER) were investigated.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A route for industry compatible directed self-assembly of high-chi PS-PDMS block copolymers\",\"authors\":\"S. Böhme, C. Girardot, J. Garnier, J. Arias‐Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, M. Zelsmann\",\"doi\":\"10.1117/12.2219312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present completely industry adapted processes for high-chi PS-PDMS block copolymers. DSA was performed on trenches fabricated within standard photolithography stacks and pattern transfer was made by using etching processes similar to those used for gate etching in industry. We propose the alignment of two different PS-PDMS (45.5kg/mol, 16kg/mol) solely by thermal annealing. By adding plasticizer molecules in the high molecular weight BCP (45.5k), we have not only avoided solvent vapor annealing but also reduced significantly the processing time. The properties of the guiding lines and the quality of the final BCP hard mask (CD uniformity, LWR, LER) were investigated.\",\"PeriodicalId\":193904,\"journal\":{\"name\":\"SPIE Advanced Lithography\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2219312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2219312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A route for industry compatible directed self-assembly of high-chi PS-PDMS block copolymers
In this work, we present completely industry adapted processes for high-chi PS-PDMS block copolymers. DSA was performed on trenches fabricated within standard photolithography stacks and pattern transfer was made by using etching processes similar to those used for gate etching in industry. We propose the alignment of two different PS-PDMS (45.5kg/mol, 16kg/mol) solely by thermal annealing. By adding plasticizer molecules in the high molecular weight BCP (45.5k), we have not only avoided solvent vapor annealing but also reduced significantly the processing time. The properties of the guiding lines and the quality of the final BCP hard mask (CD uniformity, LWR, LER) were investigated.