具有肖特基势垒的新型mos门控隧道晶体管

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496421

M. Kimura

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引用次数: 2

摘要

提出并演示了一种新型隧道晶体管，其中电子可以通过肖特基金属和肖特基结上的MOS栅在界面上形成的积累层之间的肖特基势垒来隧道，以控制隧道电流。

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A new type MOS-gated tunnel transistor with a Schottky barrier

A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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