利用双层栅介质增强In-Ga-Zn-O TFTs的性能

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608108

Xiaobin Zhou, Dedong Han, Junchen Dong, Huijin Li, Xing Zhang, Yi Wang, Wen Yu, Shengdong Zhang

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引用次数: 0

摘要

我们在高温沉积(H-D) SiO2和In-Ga-Zn-O (IGZO)活性层之间插入低温沉积(L-D) SiO2以提高TFT性能。与单层SiO2 TFT相比，双层SiO2 TFT的饱和迁移率(μsat)从0.21增加到0.98 cm2/V•s，亚阈值摆幅(SS)从1.05降低到0.506 V/decade，离子/离合率(Ion/Ioff)从8.2×105增加到1.28×106。

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Performance enhancement of In-Ga-Zn-O TFTs using double-layer gate dielectric

We insert a low-temperature deposited (L-D) SiO2 between the high-temperature deposited (H-D) SiO2 and In-Ga-Zn-O (IGZO) active layer to enhance the TFT performance. Compared with the single SiO2 TFT, the performance of the double-layer SiO2 TFT shows obvious improvements, for instance, the saturation mobility (μsat) increases from 0.21 to 0.98 cm²/V•s, the subthreshold swing (SS) decreases from 1.05 to 0.506 V/decade and the Ion/Ioff increases from 8.2×10⁵ to 1.28×10⁶.

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2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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