Ge(111)翅片发光二极管

K. Tani, S. Saito, K. Oda, M. Miura, T. Mine, T. Sugawara, T. Ido
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引用次数: 3

摘要

垂直于衬底的锗量子阱,称为锗鳍,是通过选择性氧化生长在原子平面Si(111)表面上的SiGe中的硅而制成的。翅片的三维结构适合于缓解由Si和Ge晶格常数不匹配引起的压缩应变。Ge二极管的电流电压特性显示出低暗电流,证实了Ge鳍片的高结晶质量。通过向Ge鳍注入正向电流,我们在Γ谷发现了直接重组。
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Ge(111)-fin light-emitting diodes
Ge quantum wells perpendicular to a substrate, called Ge fins, have been fabricated by selectively oxidizing Si in SiGe grown epitaxially on an atomically flat Si(111) surface. The three-dimensional structure of the fins is suitable for relaxing the compressive strain induced by the lattice constant mismatch between the Si and Ge. The current voltage characteristics of Ge diodes show low dark currents, confirming the high crystalline quality of the Ge fins. By injecting forward currents into the Ge fins, we found direct recombinations at the Γ valley.
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