CDM应力上升时间对高压ESD保护正向恢复效应的影响

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509776

Leonardo Di Biccari, A. Boroni, L. Cerati, L. Zullino, L. Merlo, A. Andreini

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引用次数: 3

摘要

最大电流值与IC封装严格相关，用于在所需的CDM电压水平上选择合适的CDM ESD保护尺寸，但高压ESD保护的恢复效果取决于电流上升时间，这是CDM中另一个与封装相关的参数。研究了电流上升时间对CDM试验的影响。

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CDM stress rise time: impact on Forward Recovery Effect for HV ESD protections

Maximum current value, strictly related to the IC package, is used for suitable CDM ESD protections sizing at required CDM voltage level, but Recovery Effects on HV ESD protections depend on current rise time, another package-dependent parameter in CDM. The impact of current rise time in CDM test is investigated.

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2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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