全聚合物场效应晶体管的稳定性研究

H. Kempa, K. Reuter, M. Bartzsch, U. Hahn, A. Huebler, D. Zielke, M. Forster, U. Scherf
{"title":"全聚合物场效应晶体管的稳定性研究","authors":"H. Kempa, K. Reuter, M. Bartzsch, U. Hahn, A. Huebler, D. Zielke, M. Forster, U. Scherf","doi":"10.1109/POLYTR.2005.1596489","DOIUrl":null,"url":null,"abstract":"We report on a systematic study on the stability of organic field effect transistors built solely from materials which can be utilised in conventional, highly productive mass-printing methods. We compare devices based on two polymer semiconductors that show good performance in transistors: poly(9,9-dioctylfluorene-co-bithiophene), a commercially available material, and poly(triphenylamine), a material especially designed for high stability. We performed tests of the evolution of the important transistor properties under ambient storage conditions, under the influence of elevated and low temperatures, under illumination with UV-light and under operation of the devices. We find a significantly improved stability of the devices based on poly(triphenylamine) in all of the experiments and comment on the relevance of the stability issues for prospected applications.","PeriodicalId":436133,"journal":{"name":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Stability study of all-polymer field-effect transistors\",\"authors\":\"H. Kempa, K. Reuter, M. Bartzsch, U. Hahn, A. Huebler, D. Zielke, M. Forster, U. Scherf\",\"doi\":\"10.1109/POLYTR.2005.1596489\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a systematic study on the stability of organic field effect transistors built solely from materials which can be utilised in conventional, highly productive mass-printing methods. We compare devices based on two polymer semiconductors that show good performance in transistors: poly(9,9-dioctylfluorene-co-bithiophene), a commercially available material, and poly(triphenylamine), a material especially designed for high stability. We performed tests of the evolution of the important transistor properties under ambient storage conditions, under the influence of elevated and low temperatures, under illumination with UV-light and under operation of the devices. We find a significantly improved stability of the devices based on poly(triphenylamine) in all of the experiments and comment on the relevance of the stability issues for prospected applications.\",\"PeriodicalId\":436133,\"journal\":{\"name\":\"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/POLYTR.2005.1596489\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/POLYTR.2005.1596489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

我们报告了一项系统的研究,研究了有机场效应晶体管的稳定性,这些晶体管完全由可用于传统的、高产的大规模印刷方法的材料制成。我们比较了基于两种聚合物半导体的器件,这两种聚合物半导体在晶体管中表现出良好的性能:聚(9,9-二辛基芴-共二噻吩),一种市售材料,聚(三苯胺),一种专为高稳定性而设计的材料。我们在环境存储条件下,在高温和低温的影响下,在紫外线照射下以及在器件的操作下,对重要晶体管性能的演变进行了测试。我们发现在所有的实验中,基于聚(三苯胺)的设备的稳定性都有了显著的提高,并对稳定性问题与预期应用的相关性进行了评论。
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Stability study of all-polymer field-effect transistors
We report on a systematic study on the stability of organic field effect transistors built solely from materials which can be utilised in conventional, highly productive mass-printing methods. We compare devices based on two polymer semiconductors that show good performance in transistors: poly(9,9-dioctylfluorene-co-bithiophene), a commercially available material, and poly(triphenylamine), a material especially designed for high stability. We performed tests of the evolution of the important transistor properties under ambient storage conditions, under the influence of elevated and low temperatures, under illumination with UV-light and under operation of the devices. We find a significantly improved stability of the devices based on poly(triphenylamine) in all of the experiments and comment on the relevance of the stability issues for prospected applications.
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