H. Nie, K. Anselm, C. Hu, B. Streetman, J. Campbell
{"title":"高速、低噪声谐振腔雪崩光电二极管","authors":"H. Nie, K. Anselm, C. Hu, B. Streetman, J. Campbell","doi":"10.1109/LEOS.1996.565298","DOIUrl":null,"url":null,"abstract":"In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High-speed, low-noise resonant-cavity avalanche photodiodes\",\"authors\":\"H. Nie, K. Anselm, C. Hu, B. Streetman, J. Campbell\",\"doi\":\"10.1109/LEOS.1996.565298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.\",\"PeriodicalId\":332726,\"journal\":{\"name\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1996.565298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.