原子力显微镜对硫化镉薄膜生长的分析

H. Moutinho, R. Dhere, K. Ramanathan, P. Sheldon, L. Kazmerski
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引用次数: 3

摘要

采用溶液生长的方法在SnO/sub /和玻璃衬底上沉积了CdS薄膜。SnO/sub 2/上的成核发生在沉积早期,在低厚度值处观察到完全的保形覆盖。cd薄膜的平均晶粒尺寸是在这些早期确定的。在沉积在玻璃基板上的薄膜中,成核速度较慢,并通过三维岛屿发生,随着沉积的进行,岛屿的大小和数量增加。光学测量表明,沉积在SnO/ sub2 /上的CdS薄膜的带隙值主要取决于衬底结构。氢热处理不影响样品的表面形貌,但降低了带隙值。
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Growth analysis of cadmium sulfide thin films by atomic force microscopy
CdS films have been deposited by solution growth on SnO/sub 2/ and glass substrates. Nucleation on SnO/sub 2/ occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO/sub 2/ depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.
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