{"title":"采用新型损耗补偿技术的16db dc - 50ghz InAlAs/InGaAs HEMT分布式基带放大器","authors":"Shunji Kimura, Yuhki Ima, Y. Umeda, T. Enoki","doi":"10.1109/GAAS.1994.636936","DOIUrl":null,"url":null,"abstract":"This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWF) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":"{\"title\":\"A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique\",\"authors\":\"Shunji Kimura, Yuhki Ima, Y. Umeda, T. Enoki\",\"doi\":\"10.1109/GAAS.1994.636936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWF) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"38\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique
This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWF) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.
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