Identification of pulse quenching enhanced layouts with subbandgap laser-induced single-event effects

Pulsed-laser single-event effects experiments on a 65 nm bulk CMOS integrated circuit confirms the existence of single-event pulse quenching and supports previous heavy-ion results. Strikes on pMOS transistors adjacent to each other are most susceptible to pulse quenching, with the pulsed-laser results emphasizing the proclivity of common n-well designs to pulse quenching. Correlation of the laser data with heavy-ion data shows that pulse quenching can occur below an LET of 9 MeV-cm2/mg.