P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel
{"title":"利用半导体激光器作为光源的高功率、高速Si和GaAs光开关器件","authors":"P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel","doi":"10.1109/ELECTR.1991.718180","DOIUrl":null,"url":null,"abstract":"High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source\",\"authors\":\"P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel\",\"doi\":\"10.1109/ELECTR.1991.718180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.\",\"PeriodicalId\":339281,\"journal\":{\"name\":\"Electro International, 1991\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electro International, 1991\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECTR.1991.718180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electro International, 1991","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTR.1991.718180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source
High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.