一种用于高速高分辨率比较器的低功耗高效宽范围偏置校准技术

Junxi Chen, Shengqun Zheng, Kai Sheng, Weixin Gai, Jianhua Feng
{"title":"一种用于高速高分辨率比较器的低功耗高效宽范围偏置校准技术","authors":"Junxi Chen, Shengqun Zheng, Kai Sheng, Weixin Gai, Jianhua Feng","doi":"10.1109/EDSSC.2017.8333237","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power, area-efficient and widerange offset calibration technique for the high-speed and highresolution comparator. The proposed technique with the low power charge pump significantly reduces the offset voltage (one sigma) from 39mV to 380μV. Without the requirements of capacitors array and extra reference voltage or bias currents, power dissipation and area are greatly reduced. Simulated results show that the comparator with calibration achieves 380μV offset operating at 3 GHz in 55nm CMOS technology with only 23.3μ W in calibration.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A low-power area-efficient wide-range offset calibration technique for high-speed high-resolution comparator\",\"authors\":\"Junxi Chen, Shengqun Zheng, Kai Sheng, Weixin Gai, Jianhua Feng\",\"doi\":\"10.1109/EDSSC.2017.8333237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-power, area-efficient and widerange offset calibration technique for the high-speed and highresolution comparator. The proposed technique with the low power charge pump significantly reduces the offset voltage (one sigma) from 39mV to 380μV. Without the requirements of capacitors array and extra reference voltage or bias currents, power dissipation and area are greatly reduced. Simulated results show that the comparator with calibration achieves 380μV offset operating at 3 GHz in 55nm CMOS technology with only 23.3μ W in calibration.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8333237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8333237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种适用于高速高分辨率比较器的低功耗、高效率、宽量程偏置校准技术。该技术与低功率电荷泵一起显著降低偏移电压(1 σ),从39mV降低到380μV。不需要电容器阵列和额外的参考电压或偏置电流,大大降低了功耗和面积。仿真结果表明,在55nm CMOS工艺下,校正后的比较器在3ghz下实现了380μV的偏置,校正功率仅为23.3μ W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A low-power area-efficient wide-range offset calibration technique for high-speed high-resolution comparator
This paper presents a low-power, area-efficient and widerange offset calibration technique for the high-speed and highresolution comparator. The proposed technique with the low power charge pump significantly reduces the offset voltage (one sigma) from 39mV to 380μV. Without the requirements of capacitors array and extra reference voltage or bias currents, power dissipation and area are greatly reduced. Simulated results show that the comparator with calibration achieves 380μV offset operating at 3 GHz in 55nm CMOS technology with only 23.3μ W in calibration.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-gate (FDQG) MOSFETs A 28-GHz band highly linear power amplifier with novel adaptive bias circuit for cascode MOSFET in 56-nm SOI CMOS Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric Investigated raman spectroscopy of graphene material properties
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1