系统级散热解决方案对高性能高散热CSP封装互连可靠性的影响

M. Ahmad, K.C. Liu, C.J. Lee, J. Priest, S. Pak, S. Narasimhan, M. Nagar, J. Xue
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引用次数: 3

摘要

采用90nm低k硅技术,为高性能和高可靠性网络交换应用开发了定制SRAM。它是一个13.6毫米x 18.4毫米倒装芯片芯片规模封装(CSP)与11.12毫米x 16.36毫米的芯片。封装有838个0.5毫米间距的BGA球。0.5 mm球距CSP最大限度地减少了电气封装的寄生,并实现了更高的数据速率性能。然而,高宽高比的模具包装区域留下很少的空间下填充点胶和没有空间加强环附件。此外,器件的高散热要求使用金属散热器倒装芯片封装,而不是复模倒装芯片封装解决方案。封装设计加上大芯片和高I/O数,在封装组装过程和互连可靠性方面提出了重大挑战。较低的玻璃化转变(Tg)下填充材料通常是首选的,以减少封装翘曲和减少低k介电中的应力,这是由硅芯片和封装材料之间的CTE不匹配引起的。然而,对于工作温度非常接近下填Tg的高功率应用,系统级热解决方案必须进行优化,以改善冷却,同时确保系统应用级的互连和封装可靠性不受影响。本文通过实验和有限元分析来研究影响封装互连可靠性的关键系统级热解决方案设计参数。评价了热沉压缩载荷对热漂移、下填料和互连材料的影响。除了压缩载荷效应外,还研究了散热器连接方式对互连可靠性的影响。通过三维疲劳分析,得出了不同测试用例下的滞回线,了解了散热器附着方式与封装材料和设计变量之间的相互作用。将有限元模型数据与实验数据进行基准比对,以确定在不影响互连可靠性的情况下实现有效热冷却的最佳设计条件。同时进行实时压力测量和故障分析,以了解系统级设计中潜在的故障模式和故障率。最后,提出了在系统级上减轻此类复杂倒装CSP封装的热和互连设计中的关键失效模式的方法。
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Impact of system level thermal solution on the interconnect reliability of high performance and high heat dissipating CSP package
A custom SRAM was developed for high performance and high reliability network switching applications using 90 nm low-k silicon technology. It is a 13.6 mm x 18.4 mm flip chip chip scale package (CSP) with a 11.12 mm x 16.36 mm die. The package has 838 BGA balls at 0.5 mm pitch. The 0.5 mm ball pitch CSP minimizes electrical package parasitics and enables higher data rate performance. However, the high aspect ratio of the die-to-package area leaves very little room for underfill dispensing and no room for a stiffener ring attachment. In addition, the high heat dissipation of the device requires the use of a metal heatspreader flip chip package as opposed to an overmolded flip chip package solution. The package design coupled with a large die and high I/O count presents significant challenges in the package assembly process and interconnect reliability. A lower glass transition (Tg) underfill material is typically preferred to reduce package warpage and to reduce the stress in the low-k dielectric caused by CTE mismatch between the silicon die and package materials. However, for high power applications where the operating temperature is very close to the underfill Tg, the system level thermal solution must be optimized for improved cooling while at the same time ensuring that the interconnect and package reliability at the system application level is not compromised. In this paper, both Experimental and Finite Element analyses were performed to investigate the key system level thermal solution design parameters that impact package interconnect reliability. The effect of heatsink compressive loading on the thermal excursions, the underfill material, and the interconnect metallurgy was evaluated. In addition to the compressive loading effect, the effect of the heatsink attachment method on interconnect reliability was also investigated. Three dimensional fatigue analyses were performed to derive the hysteresis loops for different test cases, to understand the interaction between the heatsink attachment method and the package material and design variables. The finite element model data was benchmarked against experimental data to determine the optimal design conditions for effective thermal cooling without compromising interconnect reliability. Real time pressure measurement and failure analysis were also performed to understand the potential failure modes and failure rates occurring in the system level design. Finally, recommendations are provided on ways to mitigate critical failure modes in the thermal and interconnect design of such complex flip chip CSP packages at the system level.
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