A. Velichko, V. Ilyushin, A. Katsyuba, G. F. Sivyh, N. I. Filimonova
{"title":"分子束外延过程中异质结构辐射加热机理分析","authors":"A. Velichko, V. Ilyushin, A. Katsyuba, G. F. Sivyh, N. I. Filimonova","doi":"10.1109/APEIE.2014.7040838","DOIUrl":null,"url":null,"abstract":"The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy\",\"authors\":\"A. Velichko, V. Ilyushin, A. Katsyuba, G. F. Sivyh, N. I. Filimonova\",\"doi\":\"10.1109/APEIE.2014.7040838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.\",\"PeriodicalId\":202524,\"journal\":{\"name\":\"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEIE.2014.7040838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2014.7040838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy
The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
