{"title":"蓝色InGaN/GaN量子阱异质结双极发光晶体管的表征","authors":"I. Tseng, Hao-Yu Lan, C. Wu","doi":"10.1109/EDSSC.2017.8126503","DOIUrl":null,"url":null,"abstract":"The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors\",\"authors\":\"I. Tseng, Hao-Yu Lan, C. Wu\",\"doi\":\"10.1109/EDSSC.2017.8126503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors
The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).
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