{"title":"最先进的离子注入低噪声砷化镓 MESFET 和单片放大器","authors":"K.G. Wang, S. Wang","doi":"10.1109/MCS.1987.1114528","DOIUrl":null,"url":null,"abstract":"State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB associated gain at 9.5 GHz. The dc yield of the amplifier chips is better than 40 percent.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier\",\"authors\":\"K.G. Wang, S. Wang\",\"doi\":\"10.1109/MCS.1987.1114528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB associated gain at 9.5 GHz. The dc yield of the amplifier chips is better than 40 percent.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
采用高产量、平面离子注入工艺制造出了最先进的砷化镓低噪声 MESFET 和单片放大器。0.5 微米栅极场效应晶体管在 12 千兆赫时的噪声系数为 1.2 分贝，相关增益为 8.8 分贝；在 18 千兆赫时的噪声系数为 1.7 分贝，相关增益为 6.6 分贝。采用这种 FET 工艺的两级单片放大器在 9.5 GHz 时实现了 1.8 dB 的噪声系数和 23.6 dB 的相关增益。放大器芯片的直流成品率优于 40%。
State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier
State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB associated gain at 9.5 GHz. The dc yield of the amplifier chips is better than 40 percent.
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