N掺杂对溅射沉积a-GaAs1−xNx薄膜载流子浓度的影响

2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI:10.1109/ICOOM.2012.6316204

Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo

{"title":"N掺杂对溅射沉积a-GaAs1−xNx薄膜载流子浓度的影响","authors":"Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo","doi":"10.1109/ICOOM.2012.6316204","DOIUrl":null,"url":null,"abstract":"This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films\",\"authors\":\"Baoshan Jia, Lu Zhou, Yuhua Wang, Duanyuan Bai, Z. Qiao, Xin Gao, B. Bo\",\"doi\":\"10.1109/ICOOM.2012.6316204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文报道了不同x值下a-GaAs1-xNx薄膜载流子浓度的变化。在不同的溅射压力下，采用反应磁控溅射沉积薄膜。随着溅射压力的增加，膜中的氮含量增加。自由载流子浓度随氮含量的增加而增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films

This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.

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2012 International Conference on Optoelectronics and Microelectronics

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