A. Kersch, W. Morokoff, C. Werner, D. Restaino, B. Vollmer
{"title":"用直接模拟蒙特卡罗方法对溅射反应器进行建模","authors":"A. Kersch, W. Morokoff, C. Werner, D. Restaino, B. Vollmer","doi":"10.1109/IEDM.1992.307337","DOIUrl":null,"url":null,"abstract":"The direct simulation Monte Carlo method is utilized to simulate the particle and energy distributions in a state of the art sputtering reactor used to deposit titanium films in small contact holes. The calculations provide information about particle and temperature distributions within the reactor, deposition rate profiles, and angular distributions of the atoms arriving at the substrate. The results agree quite well with experimental data.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling of a sputter reactor using the direct simulation Monte Carlo method\",\"authors\":\"A. Kersch, W. Morokoff, C. Werner, D. Restaino, B. Vollmer\",\"doi\":\"10.1109/IEDM.1992.307337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The direct simulation Monte Carlo method is utilized to simulate the particle and energy distributions in a state of the art sputtering reactor used to deposit titanium films in small contact holes. The calculations provide information about particle and temperature distributions within the reactor, deposition rate profiles, and angular distributions of the atoms arriving at the substrate. The results agree quite well with experimental data.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of a sputter reactor using the direct simulation Monte Carlo method
The direct simulation Monte Carlo method is utilized to simulate the particle and energy distributions in a state of the art sputtering reactor used to deposit titanium films in small contact holes. The calculations provide information about particle and temperature distributions within the reactor, deposition rate profiles, and angular distributions of the atoms arriving at the substrate. The results agree quite well with experimental data.<>
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