Xiaomeng Zhang, Shuo Li, Tylor Moody, H. Xue, S. Ren
{"title":"多指MOSFET低噪声放大器性能分析","authors":"Xiaomeng Zhang, Shuo Li, Tylor Moody, H. Xue, S. Ren","doi":"10.1109/NAECON.2014.7045833","DOIUrl":null,"url":null,"abstract":"The Multi-finger layout technique has been extensively used in Nano-scale CMOS circuit design due to the increased circuit performance compared to a single finger layout. However choosing a finger width and number of fingers to optimize circuit performance is a challenging problem. In this paper the performance of a 2.4GHz single ended low noise amplifier (LNA) with a fixed total transistor width in 90nm CMOS technology is analyzed as function of number of fingers (N<sub>f</sub>). The results show that the drain to source current (I<sub>ds</sub>), transconductance (g<sub>m</sub>) and effective gate capacitance (C<sub>geff</sub>) increase with increasing N<sub>f</sub>. The effect of N<sub>f</sub> on transistor cutoff frequency (f<sub>T</sub>) and LNA noise figure (NF), voltage gain (AV), center frequency (f<sub>C</sub>), and impedance/noise matching is presented.","PeriodicalId":318539,"journal":{"name":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Multi-finger MOSFET low noise amplifier performance analysis\",\"authors\":\"Xiaomeng Zhang, Shuo Li, Tylor Moody, H. Xue, S. Ren\",\"doi\":\"10.1109/NAECON.2014.7045833\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Multi-finger layout technique has been extensively used in Nano-scale CMOS circuit design due to the increased circuit performance compared to a single finger layout. However choosing a finger width and number of fingers to optimize circuit performance is a challenging problem. In this paper the performance of a 2.4GHz single ended low noise amplifier (LNA) with a fixed total transistor width in 90nm CMOS technology is analyzed as function of number of fingers (N<sub>f</sub>). The results show that the drain to source current (I<sub>ds</sub>), transconductance (g<sub>m</sub>) and effective gate capacitance (C<sub>geff</sub>) increase with increasing N<sub>f</sub>. The effect of N<sub>f</sub> on transistor cutoff frequency (f<sub>T</sub>) and LNA noise figure (NF), voltage gain (AV), center frequency (f<sub>C</sub>), and impedance/noise matching is presented.\",\"PeriodicalId\":318539,\"journal\":{\"name\":\"NAECON 2014 - IEEE National Aerospace and Electronics Conference\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"NAECON 2014 - IEEE National Aerospace and Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON.2014.7045833\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"NAECON 2014 - IEEE National Aerospace and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2014.7045833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Multi-finger layout technique has been extensively used in Nano-scale CMOS circuit design due to the increased circuit performance compared to a single finger layout. However choosing a finger width and number of fingers to optimize circuit performance is a challenging problem. In this paper the performance of a 2.4GHz single ended low noise amplifier (LNA) with a fixed total transistor width in 90nm CMOS technology is analyzed as function of number of fingers (Nf). The results show that the drain to source current (Ids), transconductance (gm) and effective gate capacitance (Cgeff) increase with increasing Nf. The effect of Nf on transistor cutoff frequency (fT) and LNA noise figure (NF), voltage gain (AV), center frequency (fC), and impedance/noise matching is presented.
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