用于高带宽应用的大型2.5D玻璃中间体的设计和演示

T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala
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引用次数: 6

摘要

本文展示了一种大型2.5D玻璃中间层,具有50um芯片级互连(FLI), 3/ 3um线路和空间(L/S)逃逸路由,以及针对JEDEC高带宽存储器(HBM)的六层金属层。我们的布线设计表明,3/3 μ m L/S的双面面板加工可以容纳HBM所需的信号线。然后利用半增材工艺在芯厚为300 um的25mm × 30mm玻璃中间层上实现3/ 3um L/S传输线。最后,采用带有SnAg焊锡帽的铜微凸点,将带有菊花链的10mm × 10m模具成功粘合到带有6条金属线的25mm × 30mm玻璃中间层上。
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Design and demonstration of large 2.5D glass interposer for high bandwidth applications
In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.
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