甚深亚微米(VDSM) CMOS中全局互连的传感技术

A. Maheshwari, Wayne Burleson
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引用次数: 40

摘要

感应电流而不是电压为长导线上的信号提供了一种替代方案,随着CMOS扩展到VDSM范围(<0.25 /spl mu/),长导线越来越限制了CMOS的性能。电流模式技术已被提出用于检测位线。我们提出了一个比较研究的电流传感与最佳中继器插入技术导线从0.35厘米至1.75厘米的长度。基于SPICE的0.18 /spl mu/的仿真结果表明,与最优中继器插入技术相比,电流传感速度更快,功耗更低。最优中继器电路的功耗随线路长度线性增加,而电流感测电路的功耗在较长的线路上几乎是恒定的。电感对差动电流传感技术影响不大。
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Current sensing techniques for global interconnects in very deep submicron (VDSM) CMOS
Sensing current instead of voltage provides an alternative to signaling on the long wires that are increasingly limiting the performance of CMOS as it scales into the VDSM regime (<0.25 /spl mu/). Current-mode techniques have been proposed for sensing bit-lines. We present a comparative study of Current-sensing with the optimal repeater insertion technique for wires from 0.35 cm to 1.75 cm in length. Simulation results using SPICE for 0.18 /spl mu/ showed that current-sensing was faster and lower-power when compared to optimal repeater insertion technique. While the power dissipated by the optimal repeater circuit increased linearly with line length, power dissipated by the current-sensing circuit was almost constant for longer lines. Inductance had little effect on the differential current sensing technique.
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