耦合n型/spl δ /掺杂层提高应变量子阱激光器的调制带宽

O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete, M. Orenstein
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引用次数: 0

摘要

通过在有源层中加入n型/spl δ /-掺杂,改善了应变单量子阱(QW)激光器的动态性能。调制带宽的增加是由于QW中捕获的增强。通过将/spl δ /-掺杂的解析解与有限应变In/sub x/Ga/sub 1-x/As/GaAs QW的平方势相结合,计算了总体势分布,从而进行了设计。
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Improved modulation bandwidth of strained quantum well lasers by coupled with n-type /spl delta/-doped layer
Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of /spl delta/-doping with the squared potential of a finite strained In/sub x/Ga/sub 1-x/As/GaAs QW.
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