{"title":"0.18µm CMOS跨阻放大电路的带宽增强","authors":"H. Escid, Sonia Salhi, A. Slimane","doi":"10.1109/ICM.2013.6734945","DOIUrl":null,"url":null,"abstract":"In this paper, a low noise and high bandwidth transimpedance amplifier (TIA) is designed for optical receiver using a 0.18 μm standard in CMOS technology. The proposed circuit operates at a data rate of 13.25 Gb/s. Employing a series inductive peaking technique, an improvement of bandwidth by only one inductor within the structure is achieved to reach a wide bandwidth of 9.28 GHz. The gain of this amplifier is 53 dB at 9.28 GHz and its input current noise is about 36.12 pA/√Hz.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Bandwidth enhancement for 0.18 µm CMOS transimpedance amplifier circuit\",\"authors\":\"H. Escid, Sonia Salhi, A. Slimane\",\"doi\":\"10.1109/ICM.2013.6734945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a low noise and high bandwidth transimpedance amplifier (TIA) is designed for optical receiver using a 0.18 μm standard in CMOS technology. The proposed circuit operates at a data rate of 13.25 Gb/s. Employing a series inductive peaking technique, an improvement of bandwidth by only one inductor within the structure is achieved to reach a wide bandwidth of 9.28 GHz. The gain of this amplifier is 53 dB at 9.28 GHz and its input current noise is about 36.12 pA/√Hz.\",\"PeriodicalId\":372346,\"journal\":{\"name\":\"2013 25th International Conference on Microelectronics (ICM)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2013.6734945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2013.6734945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bandwidth enhancement for 0.18 µm CMOS transimpedance amplifier circuit
In this paper, a low noise and high bandwidth transimpedance amplifier (TIA) is designed for optical receiver using a 0.18 μm standard in CMOS technology. The proposed circuit operates at a data rate of 13.25 Gb/s. Employing a series inductive peaking technique, an improvement of bandwidth by only one inductor within the structure is achieved to reach a wide bandwidth of 9.28 GHz. The gain of this amplifier is 53 dB at 9.28 GHz and its input current noise is about 36.12 pA/√Hz.
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