基于频谱平衡方法的半导体器件频域物理分析

G. Leuzzi, V. Stornelli
{"title":"基于频谱平衡方法的半导体器件频域物理分析","authors":"G. Leuzzi, V. Stornelli","doi":"10.1109/EMICC.2006.282669","DOIUrl":null,"url":null,"abstract":"In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach\",\"authors\":\"G. Leuzzi, V. Stornelli\",\"doi\":\"10.1109/EMICC.2006.282669\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282669\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

在这项工作中,频域频谱平衡技术用于非线性器件和电路的物理分析。当应用于玻尔兹曼输运方程的矩时,该技术具有非常简单的形式,并且特别适用于非常高的频率和多音分析。这种方法还允许很容易地包含半导体的频率相关参数,特别是在非常高的频率下(例如介电常数),并且容易和直接耦合到无源外部环境。文中给出了用流体动力学形式表达输运方程的准二维模型的应用实例,并将其结果与标准时域方法和直流实测数据进行了比较
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Frequency-Domain Physics-Based Analysis of semiconductor devices by a Spectral-Balance approach
In this work, the frequency-domain spectral balance technique is used for the physics-based analysis of non-linear devices and circuits. This technique assumes a very simple form when applied to the moments of Boltzmann's transport equation, and is especially suitable for very high frequency and for multitone analysis. This approach also allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. An example of application to a quasi-2D model with a hydrodynamic formulation of the transport equations is given, and its results are compared to a standard time-domain approach and to DC measured data
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