铁电锆铪酸盐电容器结构的光容效应

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-12-01 DOI:10.1109/EDSSC.2017.8126507

G. Liou, Chun‐Hu Cheng, Y. Chiu

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摘要

本文研究了金属-铁电-绝缘体-半导体电容器在光照条件下的光容效应。光电容效应主要是由耗尽电荷的变化引起的光子激发引起的。我们认为铁电畴受到界面捕获电荷形成的缺陷偶极子电荷的影响，从而导致耗尽电容的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

In this work, we investigated the photocapacitive effect of the metal-ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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