大阵列NMOSFET驱动器件的ESD保护和驱动能力开关控制电路

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126476

Hung-Wei Chen, Shao-Chang Huang, Mi-Chang Chang, Jen-Hang Yang, Tingyou Lin

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引用次数: 1

摘要

由于mosfet的大型阵列器件对于驱动能力来说是巨大的，因此也需要ESD自我保护。然后，通常采用大漏极-触点-多栅极间距布置规则，布置面积较大。本文设计了一种采用最小器件布局原则的新型控制电路。因此，它的结果是一个非常小的布局面积，并可以建立ESD自我保护能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESD protection and driving capability switch control circuits for large array NMOSFET driving devices

Since large array devices of MOSFETs are huge for driving capabilities, ESD self protections are also required. Then, the large drain-contact-to-poly-gate-spacing layout rule is usually adopted with large layout areas. In this paper, a new control circuit is implemented for adopting the minimum device layout rule in the LAD. Hence, it results in a very small layout area and ESD self-protection capabilities can be established.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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