V. Ferlet-Cavrois, E. Dupont-Nivet, J. Vildeuil, O. Musseau, J. Leray
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Transient radiation effects in CMOS/SOI transistors and circuits
The dose rate hardening of a CMOS/SOI technology is evaluated in this paper. The response of elementary transistors is studied with an original method by using a 2D drift-diffusion code. The photocurrent model is introduced in SPICE simulation to predict the sensitivity of complex circuits. A good agreement is observed between simulation and experiment. Simple rules to harden circuits are deduced from simulation.
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