磁性微电子元件的通用计算方法:饱和铁磁矩形棱镜和矩形线圈

A. Andreev, J. Ngarmnil, K. Nandhasri
{"title":"磁性微电子元件的通用计算方法:饱和铁磁矩形棱镜和矩形线圈","authors":"A. Andreev, J. Ngarmnil, K. Nandhasri","doi":"10.1109/SMELEC.2000.932460","DOIUrl":null,"url":null,"abstract":"The paper presents a mathematical model applicable both for calculation of the 3D magnetic field outside a rectangular coil and demagnetization and stray field of a rectangular saturated ferromagnetic prism. An infinite thin surface current with surface density j (A/cm) has been used to model the coil block. Different mathematical models for analysis of the magnetic microelectronic components are discussed. Results of the calculation are presented.","PeriodicalId":359114,"journal":{"name":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Universal method for the calculation of magnetic microelectronic components: the saturated ferromagnetic rectangular prism and the rectangular coil\",\"authors\":\"A. Andreev, J. Ngarmnil, K. Nandhasri\",\"doi\":\"10.1109/SMELEC.2000.932460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a mathematical model applicable both for calculation of the 3D magnetic field outside a rectangular coil and demagnetization and stray field of a rectangular saturated ferromagnetic prism. An infinite thin surface current with surface density j (A/cm) has been used to model the coil block. Different mathematical models for analysis of the magnetic microelectronic components are discussed. Results of the calculation are presented.\",\"PeriodicalId\":359114,\"journal\":{\"name\":\"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2000.932460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2000.932460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一个既适用于计算矩形线圈外三维磁场,又适用于计算矩形饱和铁磁棱镜的退磁和杂散场的数学模型。采用表面密度为j (A/cm)的无限细表面电流来模拟线圈块。讨论了磁性微电子元件分析的不同数学模型。最后给出了计算结果。
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Universal method for the calculation of magnetic microelectronic components: the saturated ferromagnetic rectangular prism and the rectangular coil
The paper presents a mathematical model applicable both for calculation of the 3D magnetic field outside a rectangular coil and demagnetization and stray field of a rectangular saturated ferromagnetic prism. An infinite thin surface current with surface density j (A/cm) has been used to model the coil block. Different mathematical models for analysis of the magnetic microelectronic components are discussed. Results of the calculation are presented.
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