{"title":"v波段三比特单片移相器","authors":"A. Jacomb-Hood, D. Seielstad, J. D. Merrill","doi":"10.1109/MCS.1987.1114520","DOIUrl":null,"url":null,"abstract":"This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maximum DC power requirement was 40 mW.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Three-Bit Monolithic Phase Shifter at V-Band\",\"authors\":\"A. Jacomb-Hood, D. Seielstad, J. D. Merrill\",\"doi\":\"10.1109/MCS.1987.1114520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maximum DC power requirement was 40 mW.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maximum DC power requirement was 40 mW.
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