Y. Takeuchi, T. Miyoshi, T. Furukawa, M. Shiraishi, M. Mori
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A novel hybrid power module with dual side-gate HiGT and SiC-SBD
In this paper, a novel hybrid power module using a new combination of dual side-gate HiGTs (high-conductivity IGBT) and SiC-SBDs is proposed. This combination achieves drastic switching loss reductions at a turn-off loss of −43%, a turn-on loss of −71%, and a reverse recovery loss of −98% compared with a conventional combination of trench gate HiGTs and U-SFDs (ultra soft & fast recovery diode). As a result, the proposed DuSH module (dual side-gate HiGT hybrid module) has an extremely low inverter loss of −50%, similar to SiC-MOSFETs.
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