{"title":"电调制吸收型光谱学在电信激光器中的应用","authors":"J. Misiewicz, G. Sȩk, R. Kudrawiec, M. Motyka","doi":"10.1109/ICTON.2007.4296198","DOIUrl":null,"url":null,"abstract":"We have presented two contactless modes of electromodulation spectroscopy as tools for detailed nondestructive characterization of low dimensional semiconductor device structures. Several examples have been shown for different solutions of the laser structures for applications in 1.3 - 1.55 mum telecommunication range. The ways for determining their fundamental properties which are related then to the device parameters have been discussed.","PeriodicalId":265478,"journal":{"name":"2007 9th International Conference on Transparent Optical Networks","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electromodulation-Absorption Type Spectroscopy of Semiconductor Structures Applied in Telecommunication Lasers\",\"authors\":\"J. Misiewicz, G. Sȩk, R. Kudrawiec, M. Motyka\",\"doi\":\"10.1109/ICTON.2007.4296198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have presented two contactless modes of electromodulation spectroscopy as tools for detailed nondestructive characterization of low dimensional semiconductor device structures. Several examples have been shown for different solutions of the laser structures for applications in 1.3 - 1.55 mum telecommunication range. The ways for determining their fundamental properties which are related then to the device parameters have been discussed.\",\"PeriodicalId\":265478,\"journal\":{\"name\":\"2007 9th International Conference on Transparent Optical Networks\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 9th International Conference on Transparent Optical Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2007.4296198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 9th International Conference on Transparent Optical Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2007.4296198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electromodulation-Absorption Type Spectroscopy of Semiconductor Structures Applied in Telecommunication Lasers
We have presented two contactless modes of electromodulation spectroscopy as tools for detailed nondestructive characterization of low dimensional semiconductor device structures. Several examples have been shown for different solutions of the laser structures for applications in 1.3 - 1.55 mum telecommunication range. The ways for determining their fundamental properties which are related then to the device parameters have been discussed.