{"title":"表征发光二极管贴装热界面的逆方法","authors":"Dae-Suk Kim, B. Han, A. Bar-Cohen","doi":"10.1109/ITHERM.2016.7517551","DOIUrl":null,"url":null,"abstract":"An inverse approach is developed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power light emitting diodes (LEDs). The transient time domain dominated by the resistance of the DTI is selected first using a hybrid analytical/numerical solution. Then, the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. The results confirm that the proposed approach offers a measurement accuracy of 0.01 K/W.","PeriodicalId":426908,"journal":{"name":"2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inverse approach to characterize die-attach thermal interface of light emitting diodes\",\"authors\":\"Dae-Suk Kim, B. Han, A. Bar-Cohen\",\"doi\":\"10.1109/ITHERM.2016.7517551\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An inverse approach is developed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power light emitting diodes (LEDs). The transient time domain dominated by the resistance of the DTI is selected first using a hybrid analytical/numerical solution. Then, the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. The results confirm that the proposed approach offers a measurement accuracy of 0.01 K/W.\",\"PeriodicalId\":426908,\"journal\":{\"name\":\"2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITHERM.2016.7517551\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITHERM.2016.7517551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inverse approach to characterize die-attach thermal interface of light emitting diodes
An inverse approach is developed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power light emitting diodes (LEDs). The transient time domain dominated by the resistance of the DTI is selected first using a hybrid analytical/numerical solution. Then, the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. The results confirm that the proposed approach offers a measurement accuracy of 0.01 K/W.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
