-180至+80/spl度/C连续波激光可见vcsel

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882266

T. Sale, G. Knowles, S. Sweeney, A. Onischenko, J. Frost, S. Pinches, J. Woodhead

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引用次数: 7

摘要

电子泄漏到p-DBR是限制可见光vcsel性能的主要过程。它可以通过改进电子约束来减少，或者通过降低镜面反射率来降低其重要性。通过这样做，我们期望在室温下测量更高的输出功率，与我们的低温结果相比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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-180 to +80/spl deg/C CW lasing in visible VCSELs

Electron leakage into the p-DBR is the major process limiting the performance of visible VCSELs. It can be reduced by improving electron confinement, or made less important by reducing the mirror reflectivity. By doing this we would then expect to measure even higher output powers at room temperature, comparable to our low temperature results.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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