基于SOI/大块硅平台的芯片级光互连硅光子器件

Gyungock Kim, I. Kim, Sanghoon Kim, Jiho Joo, Ki-seok Jang, Sun Ae Kim, J. Oh, Jeong Woo Park, Myung-Joon Kwack, Jaegyu Park, Hyundai Park, Gun Sik Park, Sanggi Kim
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引用次数: 5

摘要

基于SOI晶圆或块状硅晶圆,我们讨论了用于芯片级光互连的硅光子器件和集成。我们提出了在SOI晶圆上的低压硅pic,其中Si调制器和Ge-on-Si光电探测器是单片集成的,用于芯片内或芯片间互连超过40 Gb/s。为了将来的芯片级集成,还提出了具有垂直倾斜pn耗尽结(VDJ)的50gb /s小尺寸耗尽型MZ调制器。我们报道了在大块硅片上的垂直照明型锗光电探测器,其高性能高达50 Gb/s。我们提出了实际实现芯片级互连的大块硅平台,以及光子收发芯片的性能。
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Silicon photonic devices based on SOI/bulk-silicon platforms for chip-level optical interconnects
Based on either a SOI wafer or a bulk-silicon wafer, we discuss silicon photonic devices and integrations for chip-level optical interconnects. We present the low-voltage silicon PICs on a SOI wafer, where Si modulators and Ge-on-Si photodetectors are monolithically-integrated for intra-chip or inter-chip interconnects over 40 Gb/s. For future chip-level integration, the 50 Gb/s small-sized depletion-type MZ modulator with the vertically-dipped PN-depletion-junction (VDJ) is also presented. We report vertical-illumination-type Ge photodetectors on bulk-silicon wafers, with high performances up to 50 Gb/s. We present the bulk-silicon platform for practical implementation of chip-level interconnects, and the performance of the photonic transceiver silicon chip.
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